Gallium Arsenide GaAs

Gallium Arsenide (GaAs) SDS
Gallium Arsenide (SDS) Data Sheet

Gallium Arsenide has specialist applications in far IR optics and lens systems.

Transmission Range
0.9 to 16 μm
Refractive Index
3.2727 at 10.33 μm (1)
Reflection Loss
44% at 10.33 μm (2 surfaces)
Absorption Coefficient
0.01 cm-1
Reststrahlen Peak
n/a
dn/dT
147 x 10-6 K-1 @ 10μm (4)
dn/dμ = 0
0.63 μm
Density
5.315 g/cc
Melting Point
1511°C
Thermal Conductivity
48 W m-1 K-1 @ 273 K
Thermal Expansion
5.7 x 10-6/°C @ 300 K (3)
Hardness
Knoop 750
Specific Heat Capacity
360 J Kg-1 K-1
Dielectric Constant
12.91 at low frequencies
Youngs Modulus (E)
84.8 GPa
Shear Modulus (G)
n/a
Bulk Modulus (K)
75.5 GPa
Elastic Coefficients
n/a
Apparent Elastic Limit
71.9 MPa
Poisson Ratio
0.31
Solubility
Insoluble in water
Molecular Weight
144.64
Class/Structure
Cubic ZnS, F43m , cleaves on (100)
 

 

µm No
1.033 3.492
1.550 3.3737
2.066 3.338
2.480 3.324
3.100 3.3125
4.133 3.3027
µm No
4.959 3.2978
6.199 3.2921
7.293 3.2874
8.266 3.2831
9.537 3.2769
10.33 3.2727
µm No
11.27 3.2671
12.40 3.2597
13.78 3.2493
15.50 3.2336
17.71 3.2081
19.07 3.1866

Gallium Arsenide is produced by Czochralski or horizontal Bridgeman crystal growth techniques. As it is arsenic bearing, precautions in handling and working should be observed.

REFERENCES:
(1) Handbook Optical Constants, ed Palik, V1, ISBN 0-12-544420-6
(2) Deutch, J.Electron. Mater. V4 p679
(3) Sze, Physics of Semiconductor Devices, Wiley 1981
(4) M.Cadona. Proc. Int Conf. Semi. Phys. 1960 p.388. Note: dn/dT = n x (4.5 +/-0.2)x10-5 °K-1

Welcome to Crystran Ltd

World Wide Optics Source

Visit Our Online Shop

Need something we aren’t listing? Get In Touch