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Gallium Arsenide (GaAs)

Gallium Arsenide (GaAs) Data Sheet     ♦ Gallium Arsenide (GaAs) MSDS

Gallium Arsenide has specialist applications in far IR optics and lens systems.

Transmission Range : 1 to 16 μm (1)
Refractive Index : 3.2727 @ 10.33 μm (1)
Reflection Loss : 44% @ 10.33 μm
Absorption Coefficient : 0.01 cm-1
Reststrahlen Peak : n/a
dn/dT : 147 x 10-6/°C @ 10  μm (4) for derivation
dn/dμ = 0 : 6.3 μm
Density : 5.315 g/cc
Melting Point : 1511°C
Thermal Conductivity : 48 W m-1 K-1 @ 273K (2)
Thermal Expansion : 5.7 x 10-6 /°C at 300K (3)
Hardness : Knoop 750
Specific Heat Capacity : 360 J Kg-1 K-1
Dielectric Constant : 12.91 at low frequencies
Youngs Modulus (E) : 84.8 GPa
Shear Modulus (G) : n/a
Bulk Modulus (K) : 75.5 GPa
Elastic Coefficients : n/a
Apparent Elastic Limit : 71.9 MPa
Poisson Ratio : 0.31
Solubility : Insoluble in water
Molecular Weight : 144.64
Class/Structure : Cubic ZnS, F43m, (100) cleavage

To download this data or our MSDS safety data sheet as a pdf, please click on the links at the top of the page.  To expand the transmission graphs, please click on the image.

Click to access current Gallium Arsenide Stock Windows
 

µm   Noµm   Noµm   No
1.033    3.492 1.550    3.3737 2.066    3.338
2.480    3.324 3.100    3.3125 4.133    3.3027
4.959    3.2978 6.199    3.2921 7.293    3.2874
8.266    3.2831 9.537    3.2769 10.33    3.2727
11.27    3.2671 12.40    3.2597 13.78    3.2493
15.50    3.2336 17.71    3.2081 19.07    3.1866

Gallium Arsenide is produced by Czochralski or horizontal Bridgeman crystal growth techniques. As it is arsenic bearing, precautions in handling and working should be observed.

REFERENCES:
(1) Handbook Optical Constants, ed Palik, V1, ISBN 0-12-544420-6
(2) Deutch, J.Electron. Mater. V4 p679
(3) Sze, Physics of Semiconductor Devices, Wiley 1981
(4) M.Cadona. Proc. Int Conf. Semicond. Phys. 1960 p.388. Note: dn/dT = n x (4.5 +/- 0.2) x 10-5 °K-1